ALD coating system is a highly compatible atomic layer deposition system designed for 300 mm wafers. It accommodates up to 25 pcs of 300-mm wafers per batch, and its 50 nm ALD:Al2O3 process throughput can reach 12 wafers per hour (single batch). It can deposit various high-quality thin films such as Al2O3, SiO2, HfO2, Ta2O5, TiO2, AlN, TiN, ZnO, Si3N4, etc.
The system is equipped with an independent source-bottle heating module and a corrosion-resistant vacuum system. It supports up to 6 solid/liquid precursor gas lines (customizable). The process temperature range is room temperature to 420°C. Load/unload, transfer, preheating, and process chambers can be integrated as required to meet diverse process expansion needs.
High-quality films that can be deposited:
High-k dielectrics: Al2O3 (aluminum oxide), HfO2 (hafnium oxide), Ta2O5 (tantalum oxide); passivation and insulation: SiO2 (silicon dioxide), Si3N4 (silicon nitride); conductive and barrier: TiN (titanium nitride); functional oxides: TiO2 (titanium dioxide), ZnO (zinc oxide); nitrides: AlN (aluminum nitride)
Main Technical Specifications
♦ Process temperature: room temperature to 420°C
♦ Number of precursor lines: up to 6 precursor gas lines (customizable), including solid and liquid precursor source bottles
♦ Carrier gas: standard N2, MFC flow control (customizable)
♦ Pressure monitoring: dual diaphragm gauge set (corrosion-resistant), 0.005 Torr–1000 Torr
♦ Base vacuum: <5×10-3 Torr
♦ Vacuum system: corrosion-resistant pump
♦ Control system: touchscreen control, industrial-grade embedded industrial computer, high reliability, expandable
♦ Operating system: industrial-grade programmable logic controller, supporting fieldbus and real-time multitasking operations
♦ High-temperature heating module: independent source-bottle heating module, supporting room temperature to 200°C
♦ Batch capacity: up to 25 pcs of 300-mm wafers (customizable)
♦ Throughput: 12 wafers per hour @50 nm ALD:Al2O3 (single batch)
♦ Cluster integration: load/unload chamber + transfer chamber + preheating chamber + process chamber (customizable)
♦ ALD processes: aluminum oxide, silicon dioxide, hafnium oxide, tantalum oxide, titanium dioxide, aluminum nitride, titanium nitride, zinc oxide, silicon nitride