Laboratory Magnetron Sputter Coater For Metals Deposition
Advantages:
Efficient deposition: Magnetic field enhances plasma density and improves ionization efficiency.
Wide range of materials: supports a variety of targets such as metals (Al, Cu), alloys (TiN), ceramics (ITO), and insulators (oxides).
Excellent film quality: By precisely controlling parameters (such as power, air pressure, substrate temperature), nanoscale uniform deposition can be achieved (small substrate uniformity ≤ ± 1%).
Flexible process: Supports DC, RF, and intermediate frequency power supplies, and is compatible with reactive sputtering (such as N₂ reactive gas required to prepare TiN) and co-sputtering technology.
Vacuum system:
Ultimate vacuum: Laboratory-grade equipment usually reaches 10 ⁻ ⁵-10 ⁻ ⁷ Pa (optional molecular pump system for high precision requirements).
Pumping rate: When the cavity volume is 1 m ³, it needs to be ≥ 500 L/s, and ensure that it is pumped from atmospheric pressure to working vacuum within 30 minutes.
Target and power supply:
Target configuration: single target (simple film layer), double target/multi-target (multi-layer film or composite film), target position switching time < 1 second.
Power Type: Direct Current Power Supply (DC): Suitable for metal targets, power 1-10 kW.
Radio Frequency Power Supply (RF): Suitable for insulated targets (such as ceramics), power 0.5-5 kW, need to match impedance network.
Intermediate frequency power supply (MF): suitable for high impedance targets or reactive sputtering, power 5-30 kW, strong arc resistance.
Control and Monitoring:
Automation level: Most laboratory equipment is semi-automatic (manual loading + automatic coating) and supports 20 groups of formula storage.
Online monitoring: standard quartz crystal film thickness gauge (± 1 nm).
Laboratory applications
New material research and development:
Requirements: Frequent replacement of target materials and process parameters, moderate requirements for uniformity (±2%).
Selection: single/double target equipment, DC+RF power supply (power 0.5-5 kW), mechanical pump+molecular pump (vacuum 10⁻⁵Pa).
Optical Film Preparation:
Requirements: Light transmittance ≥ 85%, reflectivity ≤ 1%, film thickness accuracy ± 0. 5 nm.
Selection: multi-target equipment (2-4 targets), medium frequency power supply (power 5-20 kW), online film thickness monitoring.
Semiconductor device research and development:
Requirements: resistivity ≤ 2 μ Ω · cm, block resistance ≤ 10 Ω/ □ The step coverage rate is ≥ 90%.
Selection: high vacuum equipment (ultimate vacuum 10⁻⁷Pa), RF/MF power supply, Class 100 clean workshop adaptation.
Recommended configuration: multi-cavity series system (loading cavity + pretreatment cavity + sputtering cavity × 3 + test chamber).