Plasma Immersion Ion Implantation and Deposition System

 

General Information


For Plasma Immersion Ion Implantation and Deposition System, it is mainly composed of double-wall process chamber, vacuum pumping system, 2 sets of filtered vacuum cathodic arc FCVA sources, 2 sets of Kaufman Ion Source KIS, RF-CCP plasma source, High Voltage Pulse Modulator HVPM, high voltage workpiece holder, gas line system, chamber temperature control, manual operating system and so on. 2 sets of FCVA sources can be used to generate metallic ions for either metal film or reactive deposition. The FCVA sources are able to do surface treatment with processing height >200mm. 2 sets of KIS sources can be used to do surface cleaning and sputtering with argon gas and the
cleaning height is >200mm RF-CCP plasma source can be used to generate gaseous plasma for either reactive deposition, plasma etching or plasma immersion ion implantation with HVPM.


1. Features

  •  Stainless Steel double wall chamber with water cooling
  •  Temperature control up to 350℃
  •  High voltage workpiece holder with water tower cooling and rotation
  •  Filtered cathodic vacuum arc sources with full metallic plasma output
  •  Kaufman ion sources for sample cleaning
  •  RF-CCP source for gaseous plasma generation
  •  High voltage pulse modulator for sample bias


2. Main Specifications

  •  Stainless Steel chamber with double wall cooling: Φ650XH720mm
  •  KYKY turbopump (2000 L/s) and 18 L/s mechanical pump for pumping system, base pressure≤ 5X10-4 Pa, the rate of rise in pressure: ≤ 0.5Pa/h, adjustable pumping rate by throttle valve
  •  High voltage workpiece holder: special designed for plasma immersion ion implantation process with rotation and quartz glass shielding to avoid contamination
  • Temperature control system: 6 surrounding heater bars with power up to 5 kW, PID auto control chamber temperature up to 350°C
  • Gas feeding system: 5 mass flow controllers with isolated valves, separately feed into arc sources ion sources and main chamber
  • 2 sets of filtered cathodic vacuum arc sources
  • 2 sets of Kaufman ion sources
  • 1 set of RF-CCP plasma source with maximum output power of 1kW, 13.56MHz
  • 2 sets of shutter valves for FCVA sources
  • 2 sets of shutter valves for Kaufman ion sources
  • 1 viewport with Lead glass and shutter