Kaufman Ion Source for Ion Etching Plasma Ion Generator Source
Working Principle
The ion source is composed of an independent discharge chamber and a double-grid ion extraction system. During operation, the gas is introduced into the discharge chamber and ionized to form a plasma. The ions enter the double-grid acceleration zone through the sheath and converge into an ion beam to be extracted. In auxiliary mode ion source, the energetic ions continuously act on the surface of the substrate or the film to achieve the effect of cleaning the surface and improving the structure of the film.
In etching mode ion source, focused ion beam is obtained through special ion source discharge chamber design. The ion beam current of 20mA/cm2 can be obtained in a small beam spot (<5cm), thereby improving the sputtering rate and target utilization rate of the target, and reducing the contamination of the deposited film by the impurity atoms.
Our Kaufman Ion Source products include broad-beam Gridded Ion Sources and automated power supplies controllers. All designs are straightforward which easily retrofit into existing vacuum systems, or easily integrate into new OEM systems.
Applications of Kaufman ion source
1. Sample surface cleaning/activation
2. Ion beam sputtering deposition, in which the ion beam is directed onto the target material to sputter out the material for thin film deposition
3. Ion beam assisted deposition, combined with the second method, works together. The equipment will be equipped with two ion sources, one facing the target material to extract the material, and the other facing the sample to assist in thin film deposition
4. The process of this ion source is clean and mainly suitable for glass or optical or transparent components